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| MITSUBISHI SEMICONDUCTOR MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. unit : mm OUTLINE 24 +/- 0.3 FEATURES Internally matched to 50 ohm system High output power P1dB = 16W (TYP.) @ f=5.9 - 6.4 GHz High power gain GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz High power added efficiency P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz Low Distortion[Item-51] IM3=-45 dBc(MIN.)@Po=31.0dBm S.C.L. 2MIN R1.2 (1) 0.6 +/- 0.15 (2) 17.4 8.0 0.2 0.2 +/- +/- 2MIN (3) 20.4 +/- 0.2 16.7 2.4 +/0.1 +/- 0.050.2 APPLICATION item 01 : 5.9 - 6.4 GHz band power amplifier item 51 : 5.9 - 6.4 GHz band digital radio communication QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 4.5 (A) Rg=25 (ohm) 4.3 +/- 0.4 1.4 Refer to Bias Procedure GF-38 Unit V V A mA mA W deg.C deg.C (1) gate (2) source(flange) (3)drain ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 15 -40 84 93.7 175 -65 / +175 < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25 Deg.C ABSOLUTE MAXIMUM RATINGS Symbol IDSS Gm VGS(off) P1dB GLP ID PAE IM3 Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion *1 *2 Delta Vf method Test conditions Min VDS = 3V , VGS = 0V VDS = 3V , ID = 4.4A VDS = 3V , ID = 80mA -2 41.5 VDS=10V, ID(RF off)=4.5A, f=5.9-6.4GHz 8 -42 Limits Typ 9 4 -3 42.5 9 4.5 33 -45 Max 12 -4 1.6 A S V dBm dB A % dBc Deg.C/W Unit Rth(ch-c) Thermal resistance *1 : item -51,2 tone test,Po=31.0dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR MGFC42V5964A 5.9 - 6.4 GHz BAND 16W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,Glp VS. f (Ta=25 Deg.C) Po,Eadd VS. Pin POWER ADDED EFFICIENCY Eadd(%) INPUT POWER Pin(dBm) OUTPUT POWER P1dB(dBm) LINEAR POWER GAIN Glp(dB) FREQUENCY f (GHz) Po,IM3 VS. Pin OUTPUT POWER Po(dBm S.C.L) INPUT POWER Pin(dBm S.C.L.) S PARAMETERS f (GHz) 5.90 6.00 6.10 6.20 6.30 6.40 (Ta=25 Deg.C , VDS=10V , IDS=4.5A) S Parameters (TYP.) S21 Magn. Angle(deg.) 2.99 2.95 2.91 2.88 2.81 2.72 -74 -91 -108 -124 -140 -157 S12 Magn. Angle(deg.) 0.071 0.071 0.072 0.078 0.079 0.079 -133 -151 -167 177 161 146 S22 Magn. Angle(deg.) 0.26 0.32 0.35 0.37 0.41 0.43 80 72 65 58 53 48 S11 Magn. Angle(deg.) 0.36 0.35 0.35 0.35 0.34 0.33 82 56 34 14 -4 -23 MITSUBISHI ELECTRIC IM3(dBc) OUTPUT POWER Po(dBm) June/2004 MITSUBISHI SEMICONDUCTOR MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
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